any changing of specification will not be informed individual mmbt4403w pnp silicon switching transistor r o h s c o m p l i a n t p r o d u c t k j c h l a b s gv d top view 1 2 3 collector 3 1 base 2 emitter maximum ratings rating symbol value unit collector emitter voltage v ceo 40 vdc collector base voltage v cbo 40 vdc emitter base voltage v ebo 5.0 vdc collector current e continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr 5 board (1) t a = 25 c derate above 25 c p d 200 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 200 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c device marking mmbt4403w = k3t, 2t electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector emitter breakdown voltage (3) (i c = 1.0 madc, i b = 0) v (br)ceo 40 e vdc collector base breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 40 e vdc emitter base breakdown voltage (i e = 0.1 madc, i c = 0) v (br)ebo 5.0 e vdc base cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i bev e 0.1 m adc collector cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i cex e 0.1 m adc 1. fr 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. pulse test: pulse width 300 s, duty cycle 2.0%. http://www.secosgmbh.com elektronische bauelemente dim min max a 1.800 2.200 b 1.150 1.350 c 0.800 1.000 d 0.300 0.400 g 1.200 1.400 h 0.000 0.100 j 0.100 0.250 k 0.350 0.500 l 0.590 0.720 s 2.000 2.400 v 0.280 0.420 all dimension in mm sot-323 01 -jun-2002 rev. a page 1 of 5
any changing of specification will not be informed individual mmbt4403w pnp silicon switching transistor electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 150 madc, v ce = 2.0 vdc) (3) (i c = 500 madc, v ce = 2.0 vdc) (3) h fe 30 60 100 100 20 e e e 300 e e collector emitter saturation voltage (3) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) e e 0.4 0.75 vdc base emitter saturation voltage (3) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.75 e 0.95 1.3 vdc small signal characteristics current gain e bandwidth product (i c = 20 madc, v ce = 10 vdc, f = 100 mhz) f t 200 e mhz collectorbase capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c cb e 8.5 pf emitterbase capacitance (v be = 0.5 vdc, i c = 0, f = 1.0 mhz) c eb e 30 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h ie 1.5 15 k w voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h re 0.1 8.0 x 10 4 small signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h fe 60 500 e output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h oe 1.0 100 mhos switching characteristics delay time (v cc = 30 vdc, v eb = 2.0 vdc, t d e 15 ns rise time ( cc , eb , i c = 150 madc, i b1 = 15 madc) t r e 20 ns storage time (v cc = 30 vdc, i c = 150 madc, t s e 225 ns fall time ( cc , c , i b1 = i b2 = 15 madc) t f e 30 ns 3. pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. turnon time figure 2. turnoff time switching time equivalent test circuit scope rise time < 4.0 ns *total shunt capacitance of test jig connectors, and oscilloscope +2 v 16 v 10 to 100 m s, duty cycle = 2% 0 1.0 k w 30 v 200 w c s * < 10 pf 1.0 k w 30 v 200 w c s * < 10 pf + 4.0 v < 2 ns 1.0 to 100 m s, duty cycle = 2% < 20 ns +14 v 0 16 v http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 2 of 5
any changing of specification will not be informed individual mmbt4403w pnp silicon switching transistor figure 3. capacitances 7.0 10 20 30 5.0 figure 4. charge data 0.1 2.0 5.0 10 20 2.0 30 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 v cc = 30 v i c /i b = 10 figure 5. turnon time 20 30 50 5.0 10 7.0 figure 6. rise time figure 7. storage time c eb q t q a 25 c 100 c transient characteristics 3.01.00.50.30.2 0.3 0.2 30 c cb 70 100 10 20 50 70 100 200 300 500 30 i c /i b = 10 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v t d @ v be(o f f ) = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 v cc = 30 v i c /i b = 10 10 20 50 70 100 200 300 500 30 100 20 70 50 200 0.7 7.0 30 i c /i b = 10 i c /i b = 20 i b1 = i b2 t s = t s 1/8 t f capacitance (pf) reverse voltage (v) q, charge (nc) i c , collector current (ma) t, time (ns) i c , collector current (ma) i c , collector current (ma) ts', storage time (ns) t r , rise time (ns) i c , collector current (ma) http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 3 of 5
any changing of specification will not be informed individual mmbt4403w pnp silicon switching transistor 6 8 10 0 4 2 0.1 2.0 5.0 10 20 50 1.00.50.20.01 0.02 0.05 100 figure 8. frequency effects smallsignal characteristics noise figure v ce = 10 vdc, t a = 25 c bandwidth = 1.0 hz i c = 1.0 ma, r s = 430 w i c = 500 m a, r s = 560 w i c = 50 m a, r s = 2.7 k w i c = 100 m a, r s = 1.6 k w r s = optimum source resistance 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 6 8 10 0 4 2 figure 9. source resistance effects f = 1 khz i c = 50 m a 100 m a 500 m a 1.0 ma h parameters v ce = 10 vdc, f = 1.0 khz, t a = 25 c this group of graphs illustrates the relationship between h fe and other aho parameters for this series of transistors. to obtain these curves, a highgain and a lowgain unit were selected from the mmbt4403w lines, and the same units were used to develop the correspondinglynumbered curves on each graph. figure 10. current gain 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 300 700 30 200 100 1000 figure 11. input impedance 100 k 100 50 5.0 7.0 20 k 10 k 5k 2k 1k 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 figure 12. voltage feedback ratio 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 0.1 20 figure 13. output admittance 500 1.0 5.0 7.0 50 20 10 5.0 2.0 5.0 2.0 1.0 0.5 0.2 mmbt4403w unit 1 mmbt4403w unit 2 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 500 70 50 k 500 200 10 100 mmbt4403w unit 1 mmbt4403w unit 2 mmbt4403w unit 1 mmbt4403w unit 2 mmbt4403w unit 1 mmbt4403w unit 2 nf, noise figure (db) f, frequency (khz) nf, noise figure (db) r s , source resistance (ohms) h fe , current gain i c , collector current (madc) h je , input impedance (ohms) i c , collector current (madc) h re , voltage feedback ratio (x10 -4 ) i c , collector current (madc) h oe , output admittance ( mhos) i c , collector current (madc) http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 4 of 5
any changing of specification will not be informed individual mmbt4403w pnp silicon switching transistor static characteristics figure 14. dc current gain figure 15. collector saturation region 0.4 0.6 0.8 1.0 0.2 0.1 0.5 2.0 3.0 50 0.2 0.3 0 1.00.7 5.0 7.0 i c = 1.0 ma 0.070.050.030.020.01 10 ma 100 ma 10 20 30 0.3 0.5 0.7 1.0 3.0 0.1 0.5 2.0 3.0 10 50 70 0.2 0.3 0.2 100 1.00.7 500 30205.0 7.0 t j = 125 c 55 c 2.0 200 300 25 c v ce = 1.0 v v ce = 10 v figure 16. aono voltages 0.4 0.6 0.8 1.0 0.2 figure 17. temperature coefficients 1.0 2.0 5.0 10 20 50 0 100 0.5 0 0.5 1.0 1.5 2.0 500 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(sat) @ v ce = 10 v vc for v ce(sat) vs for v be 200 0.1 0.2 0.5 2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 500 ma 0.005 h fe , normalized current gain i c , collector current (ma) v ce , collector-emitter voltage (v) ib, base current (ma) voltage (v) i c , collector current (ma) coefficient (mv/ ) i c , collector current (ma) c http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 5 of 5
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